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2N5401-B-T92-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N5401-B-T92-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2N5401 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R201-001,D ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA TO-92 625 mW Collector Dissipation SOT-89 PC 500 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic = -100 µA, I E = 0 -160 V Collector-Emitter Breakdown Voltage BVCEO Ic = -1mA, IB = 0 -150 V Emitter-Base Breakdown Voltage BVEBO IE = -10µA, Ic = 0 -6 V Collector Cut-off Current ICBO VCB = -120V, IE = 0 -50 nA Emitter Cut-off Current IEBO VEB = -3V, Ic = 0 -50 nA DC Current Gain(Note) hFE1 hFE2 hFE3 VCE = -5V, Ic = -1mA VCE = -5V, Ic = -10mA VCE = -5V, Ic = -50mA 80 80 80 400 Collector-Emitter Saturation Voltage VCE(SAT) Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA -0.2 -0.5 V Base-Emitter Saturation Voltage VBE(SAT) Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA -1 -1 V Current Gain Bandwidth Product fT VCE = -10V, Ic = -10mA f = 100MHz 100 400 MHz Output Capacitance Cob VCB = -10V, IE = 0, f = 1MHz 6.0 pF Noise Figure NF Ic = -0.25mA, VCE = -5V Rs = 1k Ω, f = 10Hz ~ 15.7kHz 8 dB Note: Pulse test: PW<300 µs, Duty Cycle<2% CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 |
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