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MC74HC00A http://onsemi.com 2 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, Plastic DIP† SOIC Package† TSSOP Package† 750 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types – 55 + 125 _C tr, tf Input Rise and Fall Time VCC = 2.0 V (Figure 1) VCC = 4.5 V VCC = 6.0 V 0 0 0 1000 500 400 ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir- cuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. |
