PN2222A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R208-022,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

75

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

6

V

Collector Current

0.6

A

SOT-89

1.2

W

Total Device Dissipation

TO-92

625

mW

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-89

104

℃/W

Thermal resistance, junction to Ambient

TO-92

θ

JA

200

℃/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

75

V

Collector-Emitter Breakdown Voltage

40

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-off Current

10

nA

Collector Cut-Off Current

0.01

10

µA

µA

Emitter Cut-Off Current

10

nA

Base Cut-Off Current

20

nA

ON CHARACTERISTICS

DC Current Gain

35

50

75

35

100

50

40

300

Collector-Emitter Saturation Voltage*

0.3

1.0

V

V

Base-Emitter Saturation Voltage*

0.6

1.2

2.0

V

V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

300

MHz

Output Capacitance

Cobo

8.0

pF

Input Capacitance

Cibo

25

pF

Collector Base Time Constant

rb'Cc

150

pS

Noise Figure

NF

f=1.0kHz

4.0

dB

Real Part of Common-Emitter High

Frequency Input Impedance

60

Ω