MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

www.unisonic.com.tw

QW-R203-024,D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

Collector-Base Voltage

700

V

Emitter Base Voltage

9

V

Continuous

12

Collector Current

Peak*

24

A

Continuous

6

Base Current

Peak*

12

A

Continuous

18

Emitter Current

Peak*

36

A

2

W

Total Power Dissipation @ Ta = 25℃

Derate above 25℃

16

mW/℃

100

W

Derate above 25℃

800

mW/℃

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction to Ambient

54

℃

/W

Thermal Resistance Junction to Case

4

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

*OFF CHARACTERISTICS

Collector- Emitter Sustaining Voltage

400

V

Collector Cutoff Current

1

5

mA

Emitter Cutoff Current

1

mA

*ON CHARACTERISTICS

40

DC Current Gain

30

1

V

1.5

V

3

V

Current-Emitter Saturation Voltage

2

V

1.2

V

1.6

V

Base-Emitter Saturation Voltage

1.5

V

DYNAMIC CHARACTERISTICS

Transition frequency

4

MHz

Output Capacitance

180

pF

SWITCHING CHARACTERISTIC

S (Resistive Load, Table 1)

Delay Time

0.06

0.1

µs

Rise Time

0.45

1

µs

Storage Time

1.3

3

µs

Fall Time

Duty Cycle ≤1%

0.2

0.7

µs

Inductive Load, Clamped (Table 1, Figure 13)

Voltage Storage Time

0.92

2.3

µs

Crossover Time

0.12

0.7

µs

*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%