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MCR101-8-AA-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies

Part # MCR101-8-AA-T92-B
Description  FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MCR101-8-AA-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies

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MCR101
SCR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R301-009,C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
MCR101-4
200
MCR101-6
400
Peak Repetitive Off-State Voltage(note)
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate
Open)
MCR101-8
VDRM,VRRM
600
V
On-Sate RMS Current (Tc=80
°C) 180° Condition Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)
ITSM
10
A
Circuit Fusing Considerations (t=8.3 ms)
I
2t
0.415
A
2s
Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0µs)
PGM
0.1
W
Forward Average Gate Power (TA=25°C, t=8.3ms)
PG(AV)
0.1
W
Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0µs)
IGM
1
A
Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0µs)
VGRM
5
V
Operating Junction Temperature @ Rated VRRM and VDRM
TJ
-40 ~ +110
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Thermal Resistance, Junction to Case
θJC
75
°C/W
Thermal Resistance, Junction to Ambient
θJA
200
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Tc=25
°C
10
Peak Forward or Reverse
Blocking Current
Tc=125
°C
IDRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ
100
µA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
VTM
ITM=1A Peak @ TA=25°C
1.7
V
Gate Trigger Current (Continuous
dc)(note2)
IGT
VAK=7Vdc, RL=100Ω, TC=25°C
40
200
µA
Tc=25
°C
0.5
5
Holding Current (note 3)
Tc=-40
°C
IH
VAK=7Vdc, initiating current=20mA
10
mA
Tc=25
°C
0.6
10
Latch Current
Tc=-40
°C
IL
VAK=7V, Ig=200µA
15
mA
Tc=25
°C
0.62
0.8
Gate Trigger Current
(continuous dc) (Note 2)
Tc=-40
°C
VGT
VAK=7Vdc, RL=100Ω
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
dV/dt
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω, TJ=110°C
20
35
V/
µs
Critical Rate of Rise of On-State Current
di/dt
IPK=20A, Pw=10µsec
diG/dt=1A/
µsec, Igt=20mA
50
A/
µs
Notes: 1. Indicates Pulse Test Width
≤1.0ms, duty cycle ≤1%
2. RGK=1000Ω included in measurement.
3. Does not include RGK in measurement.


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