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MCR101-8-AA-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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MCR101-8-AA-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page MCR101 SCR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R301-009,C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT MCR101-4 200 MCR101-6 400 Peak Repetitive Off-State Voltage(note) (TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open) MCR101-8 VDRM,VRRM 600 V On-Sate RMS Current (Tc=80 °C) 180° Condition Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) ITSM 10 A Circuit Fusing Considerations (t=8.3 ms) I 2t 0.415 A 2s Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0µs) PGM 0.1 W Forward Average Gate Power (TA=25°C, t=8.3ms) PG(AV) 0.1 W Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0µs) IGM 1 A Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0µs) VGRM 5 V Operating Junction Temperature @ Rated VRRM and VDRM TJ -40 ~ +110 °C Storage Temperature TSTG -40 ~ +150 °C Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL DATA PARAMETER SYMBOL RATING UNIT Thermal Resistance, Junction to Case θJC 75 °C/W Thermal Resistance, Junction to Ambient θJA 200 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Tc=25 °C 10 Peak Forward or Reverse Blocking Current Tc=125 °C IDRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ 100 µA ON CHARACTERISTICS Peak Forward On-State Voltage (Note1) VTM ITM=1A Peak @ TA=25°C 1.7 V Gate Trigger Current (Continuous dc)(note2) IGT VAK=7Vdc, RL=100Ω, TC=25°C 40 200 µA Tc=25 °C 0.5 5 Holding Current (note 3) Tc=-40 °C IH VAK=7Vdc, initiating current=20mA 10 mA Tc=25 °C 0.6 10 Latch Current Tc=-40 °C IL VAK=7V, Ig=200µA 15 mA Tc=25 °C 0.62 0.8 Gate Trigger Current (continuous dc) (Note 2) Tc=-40 °C VGT VAK=7Vdc, RL=100Ω 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage dV/dt VD=Rated VDRM, Exponential Waveform, RGK=1000Ω, TJ=110°C 20 35 V/ µs Critical Rate of Rise of On-State Current di/dt IPK=20A, Pw=10µsec diG/dt=1A/ µsec, Igt=20mA 50 A/ µs Notes: 1. Indicates Pulse Test Width ≤1.0ms, duty cycle ≤1% 2. RGK=1000Ω included in measurement. 3. Does not include RGK in measurement. |
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