Electronic Components Datasheet Search |
|
BUK9510-30 Datasheet(PDF) 6 Page - NXP Semiconductors |
|
BUK9510-30 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK9510-30 Logic level FET Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 75 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.15. Normalised avalanche energy rating. W DSS% = f(Tmb); conditions: ID = 45 A Fig.16. Avalanche energy test circuit. Fig.17. Switching test circuit. 0 1020 3040 5060 0 1 2 3 4 5 9510-30 QG / nC VGS / V VDS / V = 6 24 20 40 60 80 100 120 140 160 180 Tmb / C 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% 0 0.5 1 1.5 2 0 20 40 60 80 100 9510-30 VSDS / V IF / A Tj / C = 175 25 L T.U.T. VDD RGS R 01 VDS -ID/100 + - shunt VGS 0 W DSS = 0.5 ⋅ LID 2 ⋅ BV DSS/(BVDSS − VDD) RD T.U.T. VDD RG VDS + - VGS 0 December 1997 6 Rev 1.100 |
Similar Part No. - BUK9510-30 |
|
Similar Description - BUK9510-30 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |