BUK9508-55 datasheet(4/8 Pages) PHILIPS

Part #	BUK9508-55

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK9508-55

Logic level FET

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

0

2

468

10

0

20

40

60

80

100

VGS/V =

3.2

3.0

2.8

2.6

2.4

2.2

3.4

4.0

10

ID/A

VDS/V

0

20

406080

100

0

10

20

30

40

50

60

70

80

90

100

110

120

gfs/S

ID/A

0

20

40

60

80

100

120

0

5

10

15

BUK9508-55

ID / A

RDS(ON) / mOhm

VGS / V =

3

3.2

3.4

3.6

4

5

10

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

BUK959-60

Tmb / degC

Rds(on) normlised to 25degC

a

0

123

4

0

20

40

60

80

100

Tj/C =

175

25

ID/A

VGS/V

BUK959-60

-100

-50

0

50

100

150

200

0

0.5

1

1.5

2

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

February 1997

4

Rev 1.000

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