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2SB857L-B-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SB857L-B-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SB857 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R217-206,C TYPICAL CHARACTERISTICS 1000 110 100 100 hFE vs. Collector Current Collector Current(mA) 1 10 1000 10000 10000 110 1000 100 Saturation Voltage vs. Collector Current Collector Current(mA) 10 100 1000 10000 hFE @ VCE=4V VBE(SAT) @ IC=10IB VBE (SAT) @ IC=10IB 10000 110 1000 100 On Voltage vs. Collector Current Collector Current(mA) 100 1000 10000 1000 1 100 10 Capacitance vs. Reverse-Biased Voltage Reverse-Biased Voltage (V) 10 100 VBE(ON) @ VCE=4V Cob Safe Operating Area Forward Voltage, VCE (V) 10 110 1 100 0.1 1000 PT=1ms PT=100ms PT=1s |
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