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BUK856-800A Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BUK856-800A
Description  Insulated Gate Bipolar Transistor IGBT
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.1. Transient thermal impedance
Z
th j-mb = f(t) ; parameter D = tp/T
Fig.2. Normalised power dissipation.
PD% = 100.P
D/PD 25˚C = f(Tmb)
Fig.3. Turn-off Safe Operating Area
conditions: T
j ≤ Tjmax. ; RG = 50 Ω
Fig.4. Typical output characteristics, T
j=25 ˚C.
I
C=f(VCE); parameter VGE
Fig.5. Typical on-state characteristics
I
C=f(VCE); parameters Tj,VGE
Fig.6. Typical transfer characteristics
I
C=f(VGE) ; conditions: VCE=15 V; parameter Tj
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
D =
tp
tp
T
T
P
t
D
D =
0
10
20
VCE / V
IC / A
BUK8Y6-800A
50
40
30
20
10
0
515
7
8
9
20
15
10
VGE / V = 6
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
VCEsat / V
IC / A
BUK8Y6-800A
50
40
30
20
10
0
Tj / C = 25
150
VGE / V =
15
10
13
5
0.1
1
10
100
0
200
400
600
800
1000
IC / A
VCE / V
BUK8y6-800
ICLM
0
2
4
6
8
10
12
VGE / V
IC / A
BUK8Y6-800A
50
40
30
20
10
0
Tj / C = 25
150
March 1993
3
Rev 1.000




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