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BUK856-800A Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BUK856-800A
Description  Insulated Gate Bipolar Transistor IGBT
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CES
Collector-emitter breakdown
V
GE = 0 V; IC = 0.25 mA
800
-
-
V
voltage
V
GE(TO)
Gate threshold voltage
V
CE = VGE; IC = 1 mA
3
4
5.5
V
I
CES
Zero gate voltage collector
V
CE = 800 V; VGE = 0 V; Tj = 25 ˚C
-
10
200
µA
current
I
CES
Zero gate voltage collector
V
CE = 800 V; VGE = 0 V; Tj =125 ˚C
-
0.2
1
mA
current
I
ECS
Reverse collector current
V
CE = -5 V; VGE = 0 V
-
0.1
5
mA
I
GES
Gate emitter leakage current
V
GE = ±30 V; VCE = 0 V
-
10
100
nA
V
CEsat
Collector-emitter saturation
V
GE = 15 V; IC = 12 A
-
2.4
3.5
V
voltage
V
GE = 15 V; IC = 24 A
-
3.1
-
V
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fe
Forward transconductance
V
CE = 15 V; IC = 6 A
3
7
-
S
C
ies
Input capacitance
V
GE = 0 V; VCE = 25 V; f = 1 MHz
-
900
1250
pF
C
oes
Output capacitance
-
85
120
pF
C
res
Feedback capacitance
-
30
50
pF
t
d on
Turn-on delay time
I
C = 12 A; VCC = 500 V;
-
25
-
ns
t
r
Turn-on rise time
V
GE = 15 V; RG = 25Ω;
-
45
-
ns
E
on
Turn-on Energy Loss
T
j = 25˚C;
-
0.6
-
mJ
t
d off
Turn-off delay time
Inductive Load
-
230
350
ns
t
f
Turn-off fall time
Energy Losses include all ’tail’
-
200
400
ns
E
off
Turn-off Energy Loss
losses
-
0.5
1
mJ
t
d on
Turn-on delay time
I
C = 12 A; VCC = 500 V;
-
25
-
ns
t
r
Turn-on rise time
V
GE = 15 V; RG = 25Ω;
-
45
-
ns
E
on
Turn-on Energy Loss
T
j = 125˚C;
-
0.6
-
mJ
t
d off
Turn-off delay time
Inductive Load
-
300
450
ns
t
f
Turn-off fall time
Energy Losses include all ’tail’
-
400
800
ns
E
off
Turn-off Energy Loss
losses
-
1
2
mJ
March 1993
2
Rev 1.000




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