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BUK856-800A Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BUK856-800A
Description  Insulated Gate Bipolar Transistor IGBT
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 1 page
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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Fast-switching N-channel insulated
SYMBOL
PARAMETER
MAX.
UNIT
gate bipolar power transistor in a
plastic envelope.
V
CE
Collector-emitter voltage
800
V
The device is intended for use in
I
C
Collector current (DC)
24
A
motor control, DC/DC and AC/DC
P
tot
Total power dissipation
125
W
converters, and in general purpose
V
CEsat
Collector-emitter on-state voltage
3.5
V
high frequency switching
E
off
Turn-off energy Loss
1.0
mJ
applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CE
Collector-emitter voltage
-
-5
800
V
V
CGR
Collector-gate voltage
R
GE = 20 kΩ
-
800
V
±V
GE
Gate-emitter voltage
-
-
30
V
I
C
Collector current (DC)
T
mb =
25 ˚C
-
24
A
I
C
Collector current (DC)
T
mb = 100 ˚C
-
12
A
I
CLM
Collector Current (Clamped
T
j ≤ Tjmax.
-40
A
Inductive Load)
V
CL ≤ 500 V
I
CM
Collector current (pulsed peak value, T
j ≤ Tjmax.
-50
A
on-state)
P
tot
Total power dissipation
T
mb =
25 ˚C
-
125
W
T
stg
Storage temperature
-
- 55
150
˚C
T
j
Junction Temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
In free air
60
-
K/W
12 3
tab
c
g
e
March 1993
1
Rev 1.000




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