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BUK856-800A Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BUK856-800A
Description  Insulated Gate Bipolar Transistor IGBT
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 5 page
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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.13. Typical Switching Times vs. R
G
conditions: I
C = 12 A; VCL = 500 V; Tj = 125 ˚C
Fig.14. Typical Switching Times vs. I
C
conditions: V
CL = 500 V; RG = 25 Ω; Tj = 125˚C
Fig.15. Test circuit for inductive load switching times.
Fig.16. Typical Energy loss at turn-off vs. R
G
conditions: I
C = 12 A; VCL = 500 V; Tj = 125 ˚C
Fig.17. Typical Energy loss at turn-off vs. I
C
conditions: V
CL = 500 V; RG = 25 Ω; Tj = 125˚C;
parameter V
CL
Fig.18. Inductive Load Switching Times definitions.
1
100
Rg / Ohm
t / ns
BUK8Y6-800A
10000
1000
100
10
10
1000
td(off)
tf
1
100
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
Rg / Ohm
10
1000
0
20
40
IC / A
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
400
300
VCL / V = 500
10
30
0
20
IC / A
t / ns
BUK8Y6-800A
500
400
300
200
100
0
td(off)
tf
10
30
: adjust for correct Ic
VCC = VCL
Lc
D.U.T.
R
0V
t p
0R1
G
VGE
IC measure
tr
td(on)
tc
tf
td(off)
I
V
t
t
IC
VGE
VCE
10%
90%
90%
10%
March 1993
5
Rev 1.000




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