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BUK856-800A Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BUK856-800A
Description  Insulated Gate Bipolar Transistor IGBT
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.7. Typical transconductance, T
j = 25 ˚C.
g
fe = f(IC); conditions: VCE = 15 V
Fig.8. Typical turn-on gate-charge characteristics.
V
GE = f(QG); conditions: IC = 12 A; parameter VCE
Fig.9. Typical Switching Times vs. T
j
conditions: I
C = 12 A; VCL = 500 V; RG = 25 Ω
Fig.10. Typical capacitances, C
ies, Coes, Cres.
C = f(V
CE); conditions: VGE = 0 V; f = 1MHz.
Fig.11. Typical turn-off dV
CE/dt vs. RG
conditions: I
C = 12 A; VCL = 500 V; Tj = 125 ˚C
Fig.12. Typical Switching losses vs. T
j
conditions: I
C = 12 A; VCL = 500 V; RG = 25 Ω
0
20
40
IC / A
gfe / S
BUK8Y6-800A
15
10
5
0
10
30
50
0
20
40
VDS / V
C / pF
Cies
Coes
Cres
10
100
1000
10000
10
30
BUK8Y6-800A
0
20
40
60
QG / nC
VGE / V
BUK8Y6-800A
16
14
12
10
8
6
4
2
0
10
30
50
1
100
Rg / Ohm
dVCE/dt (V/ns)
BUK8Y6-800A
15
10
5
0
10
1000
0
20
40
60
80
100
120
140
Tj / C
t / ns
BUK8Y6-800A
600
500
400
300
200
100
0
td(off)
tf
0
20
40
60
80
100
120
140
Tj / C
E / mJ
BUK8Y6-800A
1.5
1
0.5
0
E(on)
E(off)
March 1993
4
Rev 1.000




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