BUK856-800A datasheet(2/7 Pages) PHILIPS

Part #	BUK856-800A

Description	Insulated Gate Bipolar Transistor IGBT

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product Specification

Insulated Gate Bipolar Transistor (IGBT)

BUK856-800A

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)CES

Collector-emitter breakdown

V

GE = 0 V; IC = 0.25 mA

800

-

V

voltage

V

GE(TO)

Gate threshold voltage

V

CE = VGE; IC = 1 mA

3

4

5.5

V

I

CES

Zero gate voltage collector

V

CE = 800 V; VGE = 0 V; Tj = 25 ˚C

-

10

200

µA

current

I

CES

Zero gate voltage collector

V

CE = 800 V; VGE = 0 V; Tj =125 ˚C

-

0.2

1

mA

current

I

ECS

Reverse collector current

V

CE = -5 V; VGE = 0 V

-

0.1

5

mA

I

GES

Gate emitter leakage current

V

GE = ±30 V; VCE = 0 V

-

10

100

nA

V

CEsat

Collector-emitter saturation

V

GE = 15 V; IC = 12 A

-

2.4

3.5

V

voltage

V

GE = 15 V; IC = 24 A

-

3.1

-

V

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fe

Forward transconductance

V

CE = 15 V; IC = 6 A

3

7

-

S

C

ies

Input capacitance

V

GE = 0 V; VCE = 25 V; f = 1 MHz

-

900

1250

pF

C

oes

Output capacitance

-

85

120

pF

C

res

Feedback capacitance

-

30

50

pF

t

d on

Turn-on delay time

I

C = 12 A; VCC = 500 V;

-

25

-

ns

t

r

Turn-on rise time

V

GE = 15 V; RG = 25Ω;

-

45

-

ns

E

on

Turn-on Energy Loss

T

j = 25˚C;

-

0.6

-

mJ

t

d off

Turn-off delay time

Inductive Load

-

230

350

ns

t

f

Turn-off fall time

Energy Losses include all ’tail’

-

200

400

ns

E

off

Turn-off Energy Loss

losses

-

0.5

1

mJ

t

d on

Turn-on delay time

I

C = 12 A; VCC = 500 V;

-

25

-

ns

t

r

Turn-on rise time

V

GE = 15 V; RG = 25Ω;

-

45

-

ns

E

on

Turn-on Energy Loss

T

j = 125˚C;

-

0.6

-

mJ

t

d off

Turn-off delay time

Inductive Load

-

300

450

ns

t

f

Turn-off fall time

Energy Losses include all ’tail’

-

400

800

ns

E

off

Turn-off Energy Loss

losses

-

1

2

mJ

March 1993

2

Rev 1.000

Similar Part No. - BUK856-800A

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK856-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT March 1993 Rev 1.000

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BUK856-800A Datasheet(PDF) 2 Page - NXP Semiconductors

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