DTA123E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R206-086,A

TYPICAL CHARACTERISTIC

100

50

20

10

5

2

1

500m

200m

100m

Input Voltage vs. Output Current

(ON Characteristics)

Ta=-40℃

25℃

100℃

10m

0

-0.5

-1.0

-1.5

-2.0

25℃

Ta=100℃

-40℃

5m

2m

1m

500μ

200μ

100μ

50μ

20μ

10μ

5μ

2μ

1μ

-2.5

-3.0

Output Current vs. Input Voltage

(OFF Characteristics)

1K

500

-100μ-200μ

-1m

-2m -5m -10m -20m

-100m

-40℃

25℃

Ta=100℃

200

100

50

20

10

5

2

1

DC Current Gain vs. Output Current

1

500m

-40℃

25℃

Ta=100℃

200m

100m

50m

20m

10m

5m

2m

1m

Output Voltage vs. Output Current

-500μ

-50m

-100μ-200μ

-1m

-2m -5m -10m -20m

-100m

-500μ

-50m

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

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