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TFDU6102-TR3 Datasheet(PDF) 8 Page - Vishay Siliconix |
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TFDU6102-TR3 Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 18 page www.vishay.com 8 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Transmitter Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. *) Typically the output pulse duration will follow the input pulse duration t and will be identical in length t. However, at pulse duration larger than 100 µs the optical output pulse duration is limited to 100 µs. This pulse duration limitation can al- ready start at 23 µs Parameter Test Conditions Symbol Min Typ. Max Unit IRED operating current, switched current limiter See derating curve (fig. 5). For 3.3 V operations no external resistor needed. For 5 V application that might be necessary depending on operating temperature range. ID 500 550 600 mA Output leakage IRED current IIRED - 1 1 µA Output radiant intensity recommended application circuit α = 0 °, 15 ° TXD = High, SD = Low, VCC1 = VCC2 = 3.3 V Internally current-controlled, no external resistor Ie 120 170 350 mW/sr Output radiant intensity VCC1 = 5.0 V, α = 0 °, 15 ° TXD = Low or SD = High, (Receiver is inactive as long as SD = High) Ie 0.04 mW/sr Output radiant intensity, angle of half intensity α ± 24 ° Peak - emission wavelength λ p 880 900 nm Spectral bandwidth Δλ 40 nm Optical rise time, fall time tropt, tfopt 10 40 ns Optical output pulse duration input pulse width 217 ns, 1.152 Mbit/s topt 207 217 227 ns input pulse width 125 ns, 4.0 Mbit/s topt 117 125 133 ns input pulse width 250 ns, 4.0 Mbit/s topt 242 250 258 ns input pulse width 0.1 μs < t TXD < 100 µs *) topt tTXD µs input pulse width tTXD ≥ 100 µs *) topt 23 100 µs Optical overshoot 25 % |
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