MMJT350T1 datasheet(1/4 Pages) ONSEMI

Part #	MMJT350T1

Description	Bipolar Power Transistors PNP Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2006 − Rev. 2

1

Publication Order Number:

MMJT350T1/D

MMJT350T1

Bipolar Power Transistors

PNP Silicon

Bipolar power transistors are designed for use in line−operated

applications such as low power, line−operated series pass and

switching regulators requiring PNP capability.

Features

• High Collector−Emitter Sustaining Voltage −

VCEO(sus) = 300 Vdc @ IC

= 1.0 mAdc

• Excellent DC Current Gain −

hFE = 30−240 @ IC

= 50 mAdc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B; > 8000 V

Machine Model, C; > 400 V

• Pb−Free Package is Available

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

MMJT350T1

SOT−223

1000 / Tape & Reel

Schematic

C 2,4

B 1

E 3

0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS, 2.75 WATTS

MMJT350T1G

SOT−223

(Pb−Free)

1000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

2

3

4

SOT−223

CASE 318E

STYLE 1

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

T350

= Device Code

MARKING DIAGRAM

(Note: Microdot may be in either location)

AYW

T350

G

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