MMDF2C03HD datasheet(3/10 Pages) ONSEMI

Part #	MMDF2C03HD

Description	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

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MMDF2C03HD

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ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

−

0.82

1.82

1.2

2.0

Vdc

Reverse Recovery Time

(IF = IS, dIS/dt = 100 A/ms)

trr

(N)

(P)

−

24

42

−

ns

ta

(N)

(P)

−

17

16

−

tb

(N)

(P)

−

7.0

26

−

Reverse Recovery Storage

Charge

QRR

(N)

(P)

−

0.025

0.043

−

mC

6. Negative signs for P−Channel device omitted for clarity.

7. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

TYPICAL ELECTRICAL CHARACTERISTICS

N−Channel

P−Channel

3.9 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0

0.4

0.8

1.2

1.6

2

0

1

3

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

4

2

TJ = 25°C

2.7 V

0.2

0.6

1.8

1.4

1

5

6

2.5 V

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

4.3 V

3.9 V

4.1 V

VGS = 10 V

0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

25

°C

2

4

6

5

1

2

2.5

3

3.5

4

3

0

0.2

0.4

0.6

0.8

2

0

2

3

4

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VGS = 10 V

1

1.2

2.7 V

2.5 V

1

1.4

1.6

1.8

1.5

1.7

1.9

2.1

2.3

3.7

0

2

3

4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

TJ = 100°C

25

°C

−55

°C

2.5

1

2.7

2.9

3.1

3.3

3.5

TJ = 100°C

−55

°C

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

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