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MMBV2101L Datasheet(PDF) 1 Page - ON Semiconductor |
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MMBV2101L Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBV2101LT1/D MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF. Features • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance − 10% • Complete Typical Design Curves • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25°C MMBV21xx Derate above 25 °C @ TA = 25°C MV21xx Derate above 25 °C LV2209 PD 225 1.8 280 2.8 mW mW/ °C mW mW/ °C Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mAdc) MMBV21xx, MV21xx LV2209 V(BR)R 30 25 − − − − Vdc Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) IR − − 0.1 mAdc Diode Capacitance Temperature Co- efficient (VR = 4.0 Vdc, f = 1.0 MHz) TCC − 280 − ppm/ °C Preferred devices are recommended choices for future use and best overall value. 3 Cathode 1 Anode 2 Cathode 1 Anode SOT−23 TO−92 1 2 3 1 2 yy yyyy AYWW G G TO−92 (TO−226AC) CASE 182 STYLE 1 SOT−23 (TO−236) CASE 318−08 STYLE 8 yyyyyy = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION 6.8−100 pF, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 1 xxx M G G xxx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. MARKING DIAGRAMS |
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