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MMBV2101L Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMBV2101L
Description  Silicon Tuning Diodes
Download  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBV2101L Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
MMBV21xx
Derate above 25
°C
@ TA = 25°C
MV21xx
Derate above 25
°C
LV2209
PD
225
1.8
280
2.8
mW
mW/
°C
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
MMBV21xx, MV21xx
LV2209
V(BR)R
30
25
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
0.1
mAdc
Diode Capacitance Temperature Co-
efficient (VR = 4.0 Vdc, f = 1.0 MHz)
TCC
280
ppm/
°C
Preferred devices are recommended choices for future use
and best overall value.
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT−23
TO−92
1
2
3
1
2
yy
yyyy
AYWW
G
G
TO−92 (TO−226AC)
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318−08
STYLE 8
yyyyyy = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
xxx M
G
G
xxx = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING
DIAGRAMS


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