MMBFJ177LT1 datasheet(2/3 Pages) ONSEMI

Part #	MMBFJ177LT1

Description	JFET Chopper P-Channel - Depletion

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBFJ177LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc)

V(BR)GSS

30

−

Vdc

Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc)

IGSS

−

1.0

nAdc

Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)

VGS(off)

0.8

2.5

Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2)

IDSS

1.5

20

mAdc

Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc)

ID(off)

−

1.0

nAdc

Drain Source On Resistance (ID = 500 mAdc)

rDS(on)

−

300

W

Input Capacitance

VDS = 0, VGS = 10 Vdc

f = 1.0 MHz

Ciss

−

11

pF

Reverse Transfer Capacitance

Crss

−

5.5

2. Pulse Test: Pulse Width < 300

ms, Duty Cycle ≤ 2%.

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MMBFJ177LT1 Datasheet(PDF) 2 Page - ON Semiconductor

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