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MMBF5457LT1 Datasheet(PDF) 1 Page - ON Semiconductor |
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MMBF5457LT1 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 4 1 Publication Order Number: MMBF5457LT1/D MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Drain−Gate Voltage VDG 25 Vdc Reverse Gate−Source Voltage VGS(r) −25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) (TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. http://onsemi.com Preferred devices are recommended choices for future use and best overall value. Device Package Shipping† ORDERING INFORMATION MMBF5457LT1 SOT−23 3000/Tape & Reel SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM 1 2 3 2 SOURCE 3 GATE 1 DRAIN 1 6 M G G MMBF5457LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. |
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