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MMBF5457LT1 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMBF5457LT1
Description  JFET - General Purpose Transistor N-Channel
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBF5457LT1 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4
1
Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
Preferred Device
JFET − General Purpose
Transistor
N−Channel
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS
25
Vdc
Drain−Gate Voltage
VDG
25
Vdc
Reverse Gate−Source Voltage
VGS(r)
−25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
(TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR− 5 = 1.0
 0.75  0.062 in.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMBF5457LT1
SOT−23
3000/Tape & Reel
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
1
2
3
2 SOURCE
3
GATE
1 DRAIN
1
6 M
G
G
MMBF5457LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
6
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.


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