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MLD1N06CL Datasheet(PDF) 3 Page - ON Semiconductor |
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MLD1N06CL Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page MLD1N06CL http://onsemi.com 3 Figure 1. Output Characteristics Figure 2. Transfer Function 24 68 4 1 0 3 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 V 8 V 4 V VGS = 3 V 0 6 V −50 °C 02 4 6 8 4 1 0 3 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 25 °C VDS ≥ 7.5 V TJ = 150°C TJ = 25°C THE SMARTDISCRETES CONCEPT From a standard power MOSFET process, several active and passive elements can be obtained that provide on−chip protection to the basic power device. Such elements require only a small increase in silicon area and/or the addition of one masking layer to the process. The resulting device exhibits significant improvements in ruggedness and reliability as well as system cost reduction. The SMARTDISCRETES device functions can now provide an economical alternative to smart power ICs for power applications requiring low on−resistance, high voltage and high current. These devices are designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontroller unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur. OPERATION IN THE CURRENT LIMIT MODE The amount of time that an unprotected device can withstand the current stress resulting from a shorted load before its maximum junction temperature is exceeded is dependent upon a number of factors that include the amount of heatsinking that is provided, the size or rating of the device, its initial junction temperature, and the supply voltage. Without some form of current limiting, a shorted load can raise a device’s junction temperature beyond the maximum rated operating temperature in only a few milliseconds. Even with no heatsink, the MLD1N06CL can withstand a shorted load powered by an automotive battery (10 to 14 V) for almost a second if its initial operating temperature is under 100 °C. For longer periods of operation in the current−limited mode, device heatsinking can extend operation from several seconds to indefinitely depending on the amount of heatsinking provided. SHORT CIRCUIT PROTECTION AND THE EFFECT OF TEMPERATURE The on−chip circuitry of the MLD1N06CL offers an integrated means of protecting the MOSFET component from high in−rush current or a shorted load. As shown in the schematic diagram, the current limiting feature is provided by an NPN transistor and integral resistors R1 and R2. R2 senses the current through the MOSFET and forward biases the NPN transistor’s base as the current increases. As the NPN turns on, it begins to pull gate drive current through R1, dropping the gate drive voltage across it, and thus lowering the voltage across the gate−to−source of the power MOSFET and limiting the current. The current limit is temperature dependent as shown in Figure 3, and decreases from about 2.3 A at 25 °C to about 1.3 A at 150°C. Since the MLD1N06CL continues to conduct current and dissipate power during a shorted load condition, it is important to provide sufficient heatsinking to limit the device junction temperature to a maximum of 150 °C. The metal current sense resistor R2 adds about 0.4 W to the power MOSFET’s on−resistance, but the effect of temperature on the combination is less than on a standard MOSFET due to the lower temperature coefficient of R2. The on−resistance variation with temperature for gate voltages of 4 and 5 V is shown in Figure 5. Back−to−back polysilicon diodes between gate and source provide ESD protection to greater than 2 kV, HBM. This on−chip protection feature eliminates the need for an external Zener diode for systems with potentially heavy line transients. |
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