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MJF6668 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MJF6668
Description  COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 8
1
Publication Order Number:
MJF6388/D
MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
Isolated Overmold Package, TO−220 Type
Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and
TIP107
100 VCEO(sus)
10 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc
High Isolation Voltage (up to 4500 VRMS)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
RMS Isolation Voltage (Note 1)
Test No. 1 Per Figure 14
Test No. 2 Per Figure 15
Test No. 3 Per Figure 16
(for 1 sec, R.H. < 30%, TA = 25_C)
VISOL
4500
3500
1500
V
Collector Current
− Continuous
− Peak (Note 2)
IC
10
15
Adc
Base Current − Continuous
IB
1.0
Adc
Total Power Dissipation (Note 3) @ TC = 25_C
Derate above 25_C
PD
40
0.31
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
Operating and Storage Temperature Range
TJ, Tstg –65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case (Note 3)
RqJC
4.0
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
Device
Package
Shipping
ORDERING INFORMATION
MJF6388
TO−220 FULLPACK
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
50 Units/Rail
3
1
COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
2
http://onsemi.com
MJF6668
50 Units/Rail
MJF6668G
50 Units/Rail
MJF6388G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
MJF6xy8 = Specific Device Code
x = 3 or 6
y = 6 or 8
G= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MJF6xy8G
AYWW
MARKING
DIAGRAM
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.


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