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MC10EP101FAR2 Datasheet(PDF) 5 Page - ON Semiconductor |
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MC10EP101FAR2 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page MC10EP101, MC100EP101 http://onsemi.com 5 Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 8) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 40 55 75 40 58 75 45 60 85 mA VOH Output HIGH Voltage (Note 9) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 9) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single−Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single−Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current −150 −150 −150 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 8. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 9. All loading with 50 W to VCC − 2.0 V. Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 10) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 40 58 75 40 61 75 45 64 85 mA VOH Output HIGH Voltage (Note 11) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note11) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single−Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single−Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current −150 −150 −150 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 10.Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 11. All loading with 50 W to VCC − 2.0 V. Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 12) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current VCC = −3.3V VCC = −5.0 V 40 40 55 58 75 75 40 40 58 61 75 75 45 45 60 64 85 85 mA IEE Power Supply Current 50 63 80 55 67 85 60 70 88 mA VOH Output HIGH Voltage (Note 13) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 13) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current −150 −150 −150 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 12.Input and output parameters vary 1:1 with VCC. 13.All loading with 50 W to VCC − 2.0 V. |
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