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BUK7535-55 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK7535-55 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7535-55 Standard level FET Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 024 68 10 0 20 40 60 80 100 ID/A VDS/V VGS/V = 16 14 12 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 10203040506070 2 4 6 8 10 12 14 16 gfs/S ID/A 0 10 2030 405060 70 25 30 35 40 45 50 55 60 65 RD(ON)/mOhm VGS/V = 6 6.5 7 8 9 10 ID/A -100 -50 0 50 100 150 200 0.5 1 1.5 2 2.5 BUK959-60 Tmb / degC Rds(on) normlised to 25degC a 02 46 8 10 12 0 10 20 30 40 50 60 70 ID/A VGS/V Tj/C = 175 25 BUK759-60 -100 -50 0 50 100 150 200 0 1 2 3 4 5 Tj / C VGS(TO) / V max. typ. min. April 1998 4 Rev 1.100 |
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