MJE243_06 datasheet(4/6 Pages) ONSEMI

Part #	MJE243

Description	Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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MJE243 − NPN,

MJE253 − PNP

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4

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

30

0.01

0.05

Figure 5. Active Region Safe Operating Area

500

ms

dc

5.0

20

10

7.0

5.0

3.0

2.0

1.0

100

ms

TJ = 150°C

0.2

0.5

1.0

2.0

0.02

1.0ms

100

70

50

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

MJE243/MJE253

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

10

5K

3K

2K

1K

500

300

200

100

50

Figure 6. Turn−Off Time

30

20

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

5

2

13

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

VR, REVERSE VOLTAGE (VOLTS)

10

100

200

50

Figure 7. Capacitance

70

50

20

10

7.0

5.0

3.0

1.0

2.0

TJ = 25°C

Cib

Cob

MJE243 (NPN)

MJE253 (PNP)

30

NPN MJE243

PNP MJE253

20

70

30

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