MJD128 datasheet(4/6 Pages) ONSEMI

Part #	MJD128

Description	Complementary Darlington Power Transistor

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MJD128T4G (PNP)

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VR, REVERSE VOLTAGE (VOLTS)

Cib

30

1

5

20

100

TJ = 25°C

300

50

70

100

0.1

2

10

50

0.5

0.2

200

Figure 8. Capacitance

Cob

t, TIME OR PULSE WIDTH (ms)

1

0.01

1000

0.3

0.2

0.07

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1

2

3

5

10

20

30

50

100

200 300

500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.5

3

0.3

0.2

0.7

1

5

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

3

2

0.7

0.5

0.3

0.2

ts

tf

tr

td @ VBE(off) = 0 V

Figure 9. Switching Times Test Circuit

Figure 10. Switching Times

0.1

1

10

7

5

2

Figure 11. Thermal Response

V2

APPROX

+8 V

0

≈ 8 k

SCOPE

VCC

−30 V

RC

51

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

25

ms

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

+ 4 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

V1

APPROX

−12 V

TUT

RB

D1

≈ 120

0.07

0.05

0.1

0.01

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