MJD122_05 datasheet(4/7 Pages) ONSEMI

Part #	MJD122

Description	Complementary Darlington Power Transistor

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MJD122 (NPN)

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4

IC, COLLECTOR CURRENT (AMP)

0.2

*IC/IB ≤ hFE/3

0.1

−55

°C to 25°C

12

3

10

104

VBE, BASE−EMITTER VOLTAGE (VOLTS)

10−1

0

+0.4

103

102

101

100

−0.2 −0.4

−0.6

TJ = 150°C

100

°C

REVERSE

FORWARD

25

°C

VCE = 30 V

105

+0.6

+0.2

−0.8

−1

−1.2 −1.4

104

VBE, BASE−EMITTER VOLTAGE (VOLTS)

10−1

103

102

101

100

105

+5

−5

qVB for VBE 25°C to 150°C

qVC for VCE(sat)

Figure 5. Temperature Coefficients

VR, REVERSE VOLTAGE (VOLTS)

Cib

30

1

5

20

100

TJ = 25°C

300

50

70

100

0.1

2

10

50

PNP

NPN

0.5

0.2

Figure 6. Collector Cut−Off Region

Figure 7. Small−Signal Current Gain

1

f, FREQUENCY (kHz)

100

210

500

5000

TC = 25°C

VCE = 4 Vdc

IC = 3 Adc

3000

550

20

100

10,000

200

300

200

500 1000

PNP MJD127

NPN MJD122

−4

−3

−2

−1

0

+4

+3

+2

+1

0.5

0.3

7

5

IC, COLLECTOR CURRENT (AMP)

0.2

0.1

1

2

3

0.5

0.3

7

5

2000

1000

10

50

20

30

PNP

NPN

200

Figure 8. Capacitance

+5

−5

−4

−3

−2

−1

0

+4

+3

+2

+1

0.7

10

0

−0.4

+0.2

+0.4 +0.6

−0.6

−0.2

+0.8

+1

+1.2 +1.4

−55

°C to 25°C

25

°C to 150°C

*IC/IB ≤ hFE/3

25

°C to 150°C

−55

°C to 25°C

25

°C to 150°C

−55

°C to 25°C

*

qVC for VCE(sat)

qVB for VBE

REVERSE

FORWARD

VCE = 30 V

TJ = 150°C

100

°C

25

°C

Cob

TYPICAL ELECTRICAL CHARACTERISTICS

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