MJB44H11T4 datasheet(2/6 Pages) ONSEMI

Part #	MJB44H11T4

Description	Complementary Power Transistors D2PAK for Surface Mount

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Manufacturer	ONSEMI [ON Semiconductor]

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MJB44H11 (NPN), MJB45H11 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0)

VCEO(sus)

80

−

Vdc

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)

ICES

−

10

mA

Emitter Cutoff Current (VEB = 5 Vdc)

IEBO

−

50

mA

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)

VCE(sat)

−

1.0

Vdc

Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)

VBE(sat)

−

1.5

Vdc

DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)

hFE

60

−

DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)

40

−

DYNAMIC CHARACTERISTICS

Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)

MJB44H11

MJB45H11

Ccb

−

130

230

−

pF

Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)

MJB44H11

MJB45H11

fT

−

50

40

−

MHz

SWITCHING TIMES

Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)

MJB44H11

MJB45H11

td + tr

−

300

135

−

ns

Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJB44H11

MJB45H11

ts

−

500

−

ns

Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJB44H11

MJB45H11

tf

−

140

100

−

ns

Figure 1. Thermal Response

t, TIME (ms)

0.01

0.05

1.0

2.0

5.0

10

20

50

500

1.0 k

0.1

0.5

0.2

1.0

0.2

0.1

0.05

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

100

200

0.1

0.02

0.01

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