MGP15N40CLG datasheet(3/10 Pages) ONSEMI

Part #	MGP15N40CLG

Description	Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK

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Manufacturer	ONSEMI [ON Semiconductor]

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MGP15N40CL, MGB15N40CL

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3

ELECTRICAL CHARACTERISTICS (continued)

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

ON CHARACTERISTICS

(continued) (Note 3)

Collector−to−Emitter On−Voltage

VCE(on)

IC = 20 A,

VGE = 4.0 V

TJ = 25°C

1.9

2.2

2.5

VDC

TJ = 150°C

2.1

2.4

2.7*

TJ = −40°C

1.85

2.15

2.45

IC = 25 A,

VGE = 4.0 V

TJ = 25°C

2.1

2.5

2.9

TJ = 150°C

2.5

2.9

3.3*

TJ = −40°C

2.0

2.4

2.8

Collector−to−Emitter On−Voltage

VCE(on)

IC = 10 A, VGE = 4.5 V

TJ = 150°C

−

1.5

1.8

VDC

Forward Transconductance

gfs

VCE = 5.0 V, IC = 6.0 A

TJ = −40°C to 150°C

8.0

15

25

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VCC = 25 V, VGE = 0 V

f = 1.0 MHz

TJ = −40°C to 150°C

−

1000

1300

pF

Output Capacitance

COSS

−

100

130

Transfer Capacitance

CRSS

−

5.0

8.0

SWITCHING CHARACTERISTICS (Note 3)

Turn−Off Delay Time (Inductive)

td(off)

VCC = 300 V, IC = 6.5 A

RG = 1.0 kW, L = 300 mH

TJ = 25°C

−

4.0

10

mSec

TJ = 150°C

−

4.5

10

Fall Time (Inductive)

tf

VCC = 300 V, IC = 6.5 A

RG = 1.0 kW, L = 300 mH

TJ = 25°C

−

7.0

10

TJ = 150°C

−

10

15*

Turn−Off Delay Time (Resistive)

td(off)

VCC = 300 V, IC = 6.5 A

RG = 1.0 kW, RL = 46 W,

TJ = 25°C

−

4.0

10

mSec

TJ = 150°C

−

4.5

10

Fall Time (Resistive)

tf

VCC = 300 V, IC = 6.5 A

RG = 1.0 kW, RL = 46 W,

TJ = 25°C

−

13

20

TJ = 150°C

−

16

20

Turn−On Delay Time

td(on)

VCC = 10 V, IC = 6.5 A

RG = 1.0 kW, RL = 1.5 W

TJ = 25°C

−

1.0

1.5

mSec

TJ = 150°C

−

1.0

1.5

Rise Time

tr

VCC = 10 V, IC = 6.5 A

RG = 1.0 kW, RL = 1.5 W

TJ = 25°C

−

4.5

6.0

TJ = 150°C

−

5.0

6.0

3. Pulse Test: Pulse Width

v 300 mS, Duty Cycle v 2%.

*Maximum Value of Characteristic across Temperature Range.

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