MGP15N40CLG datasheet(2/10 Pages) ONSEMI

Part #	MGP15N40CLG

Description	Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 10 page

MGP15N40CL, MGB15N40CL

http://onsemi.com

2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55

°C ≤ TJ ≤ 175°C)

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150°C

EAS

300

200

mJ

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25°C

EAS(R)

1000

mJ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.0

°C/W

Thermal Resistance, Junction−to−Ambient

TO−220

RqJA

62.5

D2PAK (Note 1)

RqJA

50

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

TL

275

°C

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

BVCES

IC = 2.0 mA

TJ = −40°C to 150°C

380

410

440

VDC

IC = 10 mA

TJ = −40°C to 150°C

390

420

450

Zero Gate Voltage Collector Current

ICES

VCE = 350 V,

VGE = 0 V

TJ = 25°C

−

1.5

20

mADC

TJ = 150°C

−

10

40*

TJ = −40°C

−

0.7

1.5

Reverse Collector−Emitter Leakage

Current

IECS

VCE = −24 V

TJ = 25°C

−

0.35

1.0

mA

TJ = 150°C

−

8.0

15*

TJ = −40°C

−

0.05

0.5

Reverse Collector−Emitter Clamp Voltage

BVCES(R)

IC = −75 mA

TJ = 25°C

25

33

50

VDC

TJ = 150°C

25

36

50

TJ = −40°C

25

30

50

Gate−Emitter Clamp Voltage

BVGES

IG = 5.0 mA

TJ = −40°C to 150°C

17

20

22

VDC

Gate−Emitter Leakage Current

IGES

VGE = 10 V

TJ = −40°C to 150°C

384

600

1000

mADC

Gate Resistor (Optional)

RG

−

TJ = −40°C to 150°C

−

70

−

W

Gate Emitter Resistor

RGE

−

TJ = −40°C to 150°C

10

16

26

kW

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGE(th)

IC = 1.0 mA,

VGE = VCE

TJ = 25°C

1.4

1.7

2.0

VDC

TJ = 150°C

0.75

1.1

1.4

TJ = −40°C

1.6

1.9

2.1*

Threshold Temperature Coefficient (Neg)

−

4.4

−

mV/

°C

Collector−to−Emitter On−Voltage

VCE(on)

IC = 6.0 A,

VGE = 4.0 V

TJ = 25°C

1.0

1.3

1.6

VDC

TJ = 150°C

0.9

1.2

1.5

TJ = −40°C

1.1

1.4

1.7*

IC = 10 A,

VGE 4.0 V

TJ = 25°C

1.3

1.6

1.9

TJ = 150°C

1.2

1.5

1.8

TJ = −40°C

1.3

1.6

1.9*

IC = 15 A,

VGE = 4.0 V

TJ = 25°C

1.6

1.95

2.25

TJ = 150°C

1.7

2.0

2.3*

TJ = −40°C

1.6

1.9

2.2

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. Pulse Test: Pulse Width

v 300 mS, Duty Cycle v 2%.

*Maximum Value of Characteristic across Temperature Range.

Similar Part No. - MGP15N40CLG

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MGP15N40CL	100Kb / 8P	Internally Clamped N-Channel IGBT April, 2000 ??Rev. 1
ON Semiconductor	MGP15N40CL	81Kb / 12P	Ignition IGBT 15 Amps, 410 Volts April, 2002 ??Rev. 7

More results

Similar Description - MGP15N40CLG

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MGP15N35CL	250Kb / 10P	Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK July, 2006 ??Rev. 5
	MGB15N40CL	81Kb / 12P	Ignition IGBT 15 Amps, 410 Volts April, 2002 ??Rev. 7
	NGD15N41CL	167Kb / 11P	Ignition IGBT 15 Amps, 410 Volts May, 2006 ??Rev. 7
	NGD15N41CLT4	94Kb / 12P	Ignition IGBT 15 Amps, 410 Volts March, 2004 ??Rev. 5
	NGD15N41CL	147Kb / 11P	Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220 December, 2011 ??Rev. 8
	NTP75N06	176Kb / 9P	Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK December, 2012 - Rev. 3
	NTP27N06	83Kb / 12P	Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK August, 2001 ??Rev. 2
	NTB5426N	118Kb / 7P	Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 November, 2008 ??Rev. 0
	NTB75N03R	73Kb / 8P	Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 October, 2003 ??Rev. 2
	NTB5411N	148Kb / 7P	Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 October, 2009 ??Rev. 2

More results

MGP15N40CLG Datasheet(PDF) 2 Page - ON Semiconductor

MGP15N40CLG Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - MGP15N40CLG

Similar Description - MGP15N40CLG

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL