MCR718T4 datasheet(1/5 Pages) ONSEMI

Part #	MCR718T4

Description	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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November, 2005 − Rev. 5

1

Publication Order Number:

MCR716/D

MCR716, MCR718

Preferred Device

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control, process control, temperature, light

and speed control.

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Surface Mount Lead Form − Case 369C

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage

(Note 1) (TJ = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR716

MCR718

VDRM,

VRRM

400

600

V

On−State RMS Current

(180

° Conduction Angles; TC = 90°C)

IT(RMS)

4.0

A

Average On−State Current

(180

° Conduction Angles; TC = 90°C)

IT(AV)

2.6

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)

ITSM

25

A

Circuit Fusing Consideration (t = 8.3 msec)

I2t

2.6

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 msec, TC = 90°C)

PGM

0.5

W

Forward Average Gate Power

(t = 8.3 msec, TC = 90°C)

PG(AV)

0.1

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 msec, TC = 90°C)

IGM

0.2

A

Operating Junction Temperature Range

TJ

−40 to +110

°C

Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage

ratings of the devices are exceeded.

SCRs

4.0 AMPERES RMS

400 − 600 VOLTS

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

DPAK

CASE 369C

STYLE 4

MARKING DIAGRAM

Y

= Year

WW

= Work Week

MCR71x

= Device Code

x= M or N

G

= Pb−Free Package

1 2

3

4

YWW

MCR

71xG

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