MCR218-4G datasheet(2/4 Pages) ONSEMI

Part #	MCR218-4G

Description	Silicon Controlled Rectifiers Reverse Blocking Thyristors

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

2.0

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM, IRRM

−

10

2.0

mA

ON CHARACTERISTICS

Peak Forward On-State Voltage (Note 2)

(ITM = 16 A Peak)

VTM

−

1.5

1.8

V

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ohms)

IGT

−

10

25

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ohms)

VGT

−

1.5

V

Gate Non−Trigger Voltage

(Rated 12 V, RL = 100 Ohms, TJ = 125°C)

VGD

0.2

−

V

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

IH

−

16

30

mA

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

dv/dt

−

100

−

V/

ms

2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle

≤ 2%.

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

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