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© Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 3 1 Publication Order Number: MCR8S/D MCR8SD, MCR8SM, MCR8SN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Features • Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • Blocking Voltage to 800 Volts • On−State Current Rating of 8 Amperes RMS at 80°C • High Surge Current Capability − 80 Amperes • Rugged, Economical TO−220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design • Immunity to dv/dt − 5 V/msec Minimum at 110°C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8SD MCR8SM MCR8SN VDRM, VRRM 400 600 800 V On-State RMS Current (180 ° Conduction Angles; TC = 80°C) IT(RMS) 8.0 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 110°C) ITSM 80 A Circuit Fusing Consideration (t = 8.33 ms) I2t 26.5 A2sec Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 5.0 W Forward Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCRs 8 AMPERES RMS 400 thru 800 VOLTS TO−220AB CASE 221A−09 STYLE 3 1 http://onsemi.com MARKING DIAGRAM A = Assembly Location Y = Year WW = Work Week x = D, M, or N G = Pb−Free Package AKA = Diode Polarity 2 3 Device Package Shipping ORDERING INFORMATION MCR8SD TO−220AB 50 Units / Rail MCR8SN TO−220AB 50 Units / Rail MCR8SDG TO−220AB (Pb−Free) 50 Units / Rail MCR8SNG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. MCR8SM TO−220AB 50 Units / Rail MCR8SMG TO−220AB (Pb−Free) 50 Units / Rail K G A PIN ASSIGNMENT 1 2 3 Anode Gate Cathode 4 Anode AY WW MCR8SxG AKA |
