MCR8N datasheet(3/5 Pages) ONSEMI

Part #	MCR8N

Description	Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Manufacturer	ONSEMI [ON Semiconductor]

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MCR8N

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3

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

30

°

60

°

dc

90

°

90

°

180

°

Figure 1. Typical RMS Current Derating

Figure 2. On−State Power Dissipation

Figure 3. Typical On−State Characteristics

Figure 4. Typical Gate Trigger Current versus

Junction Temperature

8

0

IT(RMS), RMS ON−STATE CURRENT (AMPS)

125

120

IT(AV), AVERAGE ON−STATE CURRENT (AMPS)

38

0

8

4

2

0

3.0

0.5

VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)

100

10

1

0.1

TJ, JUNCTION TEMPERATURE (°C)

−10

−40

20

2

0

2.5

115

105

12

3

1

2

6

10

20

1.0

2.0

20

50

80

125

dc

180

°

60

°

MAXIMUM @ TJ = 25°C

MAXIMUM @ TJ = 125°C

5

1.5

45

110

4

100

90

95

67

12

14

6

7

30

°

16

18

535

65

95

−25

110

4

6

8

10

12

14

16

18

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