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BUK7510-30 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK7510-30 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7510-30 Standard level FET STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 30 - - V voltage T j = -55˚C 27 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2 3.0 4.0 V T j = 175˚C 1 - - V T j = -55˚C - - 4.4 V I DSS Zero gate voltage drain current V DS = 30 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 0.02 1 µA T j = 175˚C - - 20 µA ±V (BR)GSS Gate-source breakdown I G = ±1 mA; 16 - - V voltage R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 9 10.5 m Ω resistance T j = 175˚C - - 19.5 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 25 A 9 18 - S Q g(tot) Total gate charge I D = 75 A; VDD = 24 V; VGS = 10 V - 51 - nC Q gs Gate-source charge - 9 - nC Q gd Gate-drain (Miller) charge - 20 - nC C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 2000 - pF C oss Output capacitance - 700 - pF C rss Feedback capacitance - 300 - pF t d on Turn-on delay time V DD = 25 V; ID = 25 A; - 26 30 ns t r Turn-on rise time V GS = 10 V; RG = 5 Ω - 3585ns t d off Turn-off delay time Resistive load - 50 60 ns t f Turn-off fall time - 30 45 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad December 1997 2 Rev 1.100 |
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