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BZG03C150G Datasheet(PDF) 2 Page - ON Semiconductor |
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BZG03C150G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BZG03C15 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, tP = 100 ms PZSM 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75 °C Thermal Resistance, Junction−to−Lead PD RqJL 1.5 20 50 W mW/ °C °C/W Forward Surge Current (Note 3) @ TA = 25°C IFSM 40 A Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 100 ms, non−repetitive square pulse 2. 1 in. square copper pad, FR−4 board 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF SYMBOLS DEFINITIONS Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max. @ IF = 0.5 A for all types) Device* Device Marking VRWM (Note 4) IR @ VRWM Breakdown Voltage Zzt @ IT VBR (V) (Note 5) @ IT Typ Max Volts mA Min Nom Max mA W W BZG03C15, G G15 11 1 13.8 15.0 15.6 50 5.0 10.0 BZG03C150, G G150 110 1 138 150 156 5 130 300 4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level 5. VBR measured at pulse test current IT at an ambient temperature of 25°C *The “G’’ suffix indicates Pb−Free package available. |
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