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MBR120VLSFT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR120VLSFT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBR120VLSFT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR) TL = 119°C IF(AV) 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 45 A Storage Temperature Range Tstg −65 to +125 °C Operating Junction Temperature TJ −65 to +125 °C Voltage Rate of Change (Rated VR) dv/dt 1000 V/ ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol TJ = 255C TJ = 855C Unit Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.5 A) (IF = 1.0 A) VF 0.275 0.315 0.340 0.205 0.270 0.300 V Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage) IR 0.60 15 mA 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. |
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Similar Description - MBR120VLSFT3 |
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