BD682G datasheet(2/4 Pages) ONSEMI

Part #	BD682G

Description	Plastic Medium?뭁ower Silicon PNP Darlingtons

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Manufacturer	ONSEMI [ON Semiconductor]

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BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

BD676, 676A

(IC = 50 mAdc, IB = 0)

BD678, 678A

BD680, 680A

BD682

BVCEO

45

60

80

100

−

Vdc

Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ICEO

−

500

mAdc

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0)

(VCB = Rated BVCEO. IE = 0, TC = 100°C)

ICBO

−

0.2

2.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

BD676, 678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc)

BD676A, 678A, 680A

hFE

750

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.5 Adc, IB = 30 mAdc)

BD678, 680, 682

(IC = 2.0 Adc, IB = 40 mAdc)

BD676A, 678A, 680A

VCE(sat)

−

2.5

2.8

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

BD678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc)

BD676A, 678A, 680A

VBE(on)

−

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

hfe

1.0

−

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

50

40

10

5.0

0

15

30

45

60

75

105

135 150 165

Figure 1. Power Temperature Derating

TC, CASE TEMPERATURE (°C)

120

90

45

20

15

30

25

35

Figure 2. DC Safe Operating Area

5.0

1.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

2.0

1.0

0.5

0.05

2.0

5.0

10

50

100

BONDING WIRE LIMIT

THERMAL LIMIT at TC = 25°C

SECONDARY BREAKDOWN LIMIT

0.2

0.1

TC = 25°C

BD676, 676A

BD678, 678A

BD680, 680A

BD682

20

There are two limitations on the power handling ability of

a transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.

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