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MBR120ESFT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR120ESFT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBR120ESFT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TL = 140°C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −65 to 150 °C Operating Junction Temperature TJ −65 to 150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 VF TJ = 25°C TJ = 100°C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.455 0.530 0.595 0.360 0.455 0.540 Maximum Instantaneous Reverse Current (Note 3), See Figure 4 IR TJ = 25°C TJ = 100°C mA (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 10 1.0 0.5 1600 500 300 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. |
Similar Part No. - MBR120ESFT1_05 |
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Similar Description - MBR120ESFT1_05 |
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