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BD681G Datasheet(PDF) 2 Page - ON Semiconductor |
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BD681G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage, (Note 1) BD675, 675A (IC = 50 mAdc, IB = 0) BD677, 677A BD679, 679A BD681 BVCEO 45 60 80 100 − − − − Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO − 500 mAdc Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100’C) ICBO − − 0.2 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc ON CHARACTERISTICS DC Currert Gain, (Note 1) (IC = 1.5 Adc,VCE = 3.0 Vdc) BD675, 677, 679, 681 (IC = 2.0 Adc, VCE = 3.0 Vdc) BD675A, 677A, 679A hFE 750 750 − − − Collector−Emitter Saturation Voltage, (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) BD677, 679, 681 (IC = 2.0 Adc, IB = 40 mAdc) BD675A, 677A, 679A VCE(sat) − − 2.5 2.8 Vdc Base−Emitter On Voltage, (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD677, 679, 681 (IC = 2.0 Adc, VCE = 3 0 Vdc) BD675A, 677A, 679A VBE(on) − − 2.5 2.5 Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe 1.0 − − 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 50 40 10 5.0 0 15 30 45 60 75 105 135 150 165 Figure 1. Power Temperature Derating TC, CASE TEMPERATURE (°C) 120 90 45 20 15 30 25 35 Figure 2. DC Safe Operating Area 5.0 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 1.0 0.5 0.05 2.0 5.0 10 50 100 BONDING WIRE LIMIT THERMALLY LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 0.2 0.1 TC = 25°C BD675, 675A BD677, 677A BD679, 679A BD681 20 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. |
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