© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 12

1

Publication Order Number:

BD675/D

BD675, BD675A, BD677,

BD677A, BD679, BD679A,

BD681

BD681 is a Preferred Device

Plastic Medium−Power

Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington

transistors can be used as output devices in complementary

general−purpose amplifier applications.

Features

= 1.5 and 2.0 Adc

with BD676, 676A, 678, 678A, 680, 680A, 682

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

BD675, A

BD677, A

BD679, A

BD681

45

60

80

100

Vdc

Collector−Base Voltage

BD675, A

BD677, A

BD679, A

BD681

45

60

80

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current

4.0

Adc

Base Current

1.0

Adc

Derate above 25

°C

40

0.32

W

W/

°C

Operating and Storage Junction

Temperature Range

– 55 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

3.13

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

4.0 AMPERES

POWER TRANSISTORS

NPN SILICON

60, 80, 100 VOLTS, 40 WATTS

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAMS

YWW

BD6xxG

3

2 1

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

BD6xx

= Device Code

x = 75, 77, 79, 81

Y

= Year

WW

= Work Week

G

= Pb−Free Package

YWW

B

BD6xxAG