MBR30H100CTG datasheet(2/6 Pages) ONSEMI

Part #	MBR30H100CTG

Description	SWITCHMODE Power Rectifier 100 V, 30 A

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MBR30H100CT

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MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

Average Rectified Forward Current

(TC = 156°C)

Per Diode

Per Device

IF(AV)

15

30

A

Peak Repetitive Forward Current

(Square Wave, 20 kHz, TC = 151°C)

IFM

30

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

250

A

Operating Junction Temperature (Note 1)

TJ

+175

°C

Storage Temperature

Tstg

*65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

Controlled Avalanche Energy (see test conditions in Figures 11 and 12)

WAVAL

200

mJ

ESD Ratings:

Machine Model = C

Human Body Model = 3B

> 400

> 8000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Thermal Resistance − Junction−to−Case (Min. Pad)

− Junction−to−Ambient (Min. Pad)

RqJC

RqJA

2.0

60

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic

Symbol

Min

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 15 A, TJ = 25°C)

(iF = 15 A, TJ = 125°C)

(iF = 30 A, TJ = 25°C)

(iF = 30 A, TJ = 125°C)

vF

−

0.76

0.64

0.88

0.76

0.80

0.67

0.93

0.80

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TJ = 125°C)

(Rated DC Voltage, TJ = 25°C)

iR

−

1.1

0.0008

6.0

0.0045

mA

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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