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MBR30H100CTG Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR30H100CTG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBR30H100CT http://onsemi.com 2 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 156°C) Per Diode Per Device IF(AV) 15 30 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Controlled Avalanche Energy (see test conditions in Figures 11 and 12) WAVAL 200 mJ ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance − Junction−to−Case (Min. Pad) − Junction−to−Ambient (Min. Pad) RqJC RqJA 2.0 60 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) vF − − − − 0.76 0.64 0.88 0.76 0.80 0.67 0.93 0.80 V Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR − − 1.1 0.0008 6.0 0.0045 mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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