MMBD301LT1G datasheet(2/5 Pages) ONSEMI

Part #	MMBD301LT1G

Description	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

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MBD301, MMBD301LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 mA)

V(BR)R

30

−

V

Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1

CT

−

0.9

1.5

pF

Reverse Leakage (VR = 25 V) Figure 3

IR

−

13

200

nAdc

Forward Voltage (IF = 1.0 mAdc) Figure 4

VF

−

0.38

0.45

Vdc

Forward Voltage (IF = 10 mAdc) Figure 4

VF

−

0.52

0.6

Vdc

ORDERING INFORMATION

Device

Package

Shipping†

MBD301

TO−92

5000 Units / Bulk

MBD301G

TO−92

(Pb−Free)

5000 Units / Bulk

MMBD301LT1

SOT−23

3000 / Tape & Reel

MMBD301LT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

MMBD301LT3

SOT−23

10,000 / Tape & Reel

MMBD301LT3G

SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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MMBD301LT1G Datasheet(PDF) 2 Page - ON Semiconductor

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