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BUK574-60H Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK574-60H Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Objective specification PowerMOS transistor BUK574-60H Logic level FET STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 60 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; - 34 42 m Ω resistance I D = 20 A DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 20 A 10 18 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1100 1750 pF C oss Output capacitance - 420 600 pF C rss Feedback capacitance - 160 275 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 25 40 ns t r Turn-on rise time V GS = 5 V; RGS = 50 Ω; - 110 150 ns t d off Turn-off delay time R gen = 50 Ω - 150 220 ns t f Turn-off fall time - 100 145 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 20 A current I DRM Pulsed reverse drain current - - - 80 A V SD Diode forward voltage I F = 20 A ; VGS = 0 V - 0.9 2.0 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 60 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.25 - µC July 1996 2 Rev 1.001 |
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