MBD110DWT1, MBD330DWT1, MBD770DWT1

http://onsemi.com

3

TYPICAL CHARACTERISTICS

MBD110DWT1

Figure 1. Reverse Leakage

Figure 2. Forward Voltage

Figure 3. Capacitance

Figure 4. Noise Figure

0.1

0.2

0.5

1.0

2.0

5.0

10

11

10

9

8

7

6

5

4

3

2

1

0

1.0

2.0

3.0

4.0

1.0

0.9

0.8

0.7

0.6

0.3

0.4

0.5

0.6

100

10

1.0

0.1

0.7

0.8

30

40

50

60

70

80

100

1.0

130

110

120

90

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

Figure 5. Noise Figure Test Circuit

LOCAL

OSCILLATOR

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

DIODE IN

TUNED

MOUNT

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(Test Circuit Figure 5)

of a die, using an impedance bridge (Boonton Radio

Model 250A RX Meter).

bridge (Boonton Electronics Model 75A or equiva-

lent).

Note 2 − Noise figure measured with diode under test in tuned

diode mount using UHF noise source and local oscillator

(LO) frequency of 1.0 GHz. The LO power is adjusted

for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see

Figure 5.

NOTES ON TESTING AND SPECIFICATIONS

MBD110DWT1

MBD110DWT1

MBD110DWT1

MBD110DWT1