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MGF4316G Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGF4316G Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 3 page  MGF431xG MITSUBISHI SEMICONDUCTOR <GaAs FET> Super Low Noise InGaAs HEMT MITSUBISHI ELECTRIC as of Apr.'98 DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS dB Symbol Parameter Test conditions Min. Typ. Max Unit Gate to Source cut-off voltage VGS=0V, VDS=2V V 50 µA Transconductance V Gs Associated gain 13.5 NFmin Minimum noise figure Parameter Ratings Unit Gate to drain voltage -4 V -4 Gate to source voltage 60 Drain current mA Channel temperature -65 ~ +125 °C L to K band low noise amplifiers. APPLICATION gm VGS (off) 0.8 — — Limits Storage temperature Total power dissipation Symbol VGDO VGSO ID Tch Tstg PT 125 50 mW V ( Ta=25°C ) — — 60 15 OUTLINE DRAWING < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. °C Gate to source leakage current Saturated drain current IDSS VGS= -2V, VDS=0V VDS=2V, ID=500µA mA -1.5 — -0.1 75 mS — FEATURES Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz ( Ta=25°C ) IG= -10µA — -3 Gate to drain breakdown voltage V(BR)GDO — IGSS VDS=2V, ID=10mA — VDS=2V, ID=10mA, f=12GHz 12 dB — — QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure MGF4316G MGF4319G VDS=2V, ID=10mA, f=12GHz 0.5 — — ˚C/W — — 625 Rth (ch-a) ∆Vf method Thermal resistance *1 *1 : Channel to ambient GD-4 |
Similar Part No. - MGF4316G |
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Similar Description - MGF4316G |
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