BUK566-60A datasheet(2/7 Pages) PHILIPS

Part #	BUK566-60A

Description	PowerMOS transistor Logic level FET

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

2 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistor

BUK566-60A

Logic level FET

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

60

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1.0

1.5

2.0

V

I

DSS

Zero gate voltage drain current

V

DS = 60 V; VGS = 0 V; Tj = 25 ˚C

-

1

10

µA

I

DSS

Zero gate voltage drain current

V

DS = 60 V; VGS = 0 V; Tj =125 ˚C

-

0.1

1.0

mA

I

GSS

Gate source leakage current

V

GS = ±15 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 5 V; ID = 25 A

-

20

26

m

Ω

resistance

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 25 A

17

30

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

2200

2800

pF

C

oss

Output capacitance

-

700

1000

pF

C

rss

Feedback capacitance

-

280

400

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 3 A;

-

40

50

ns

t

r

Turn-on rise time

V

GS = 5 V;

-

150

250

ns

t

d off

Turn-off delay time

R

GS = 50 Ω;

-

350

450

ns

t

f

Turn-off fall time

R

gen = 50 Ω

-

190

250

ns

L

d

Internal drain inductance

Measured from upper edge of drain

-

2.5

-

nH

tab to centre of die

L

s

Internal source inductance

Measured from source lead

-

7.5

-

nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

50

A

current

I

DRM

Pulsed reverse drain current

-

200

A

V

SD

Diode forward voltage

I

F = 50 A ; VGS = 0 V

-

1.1

2.0

V

t

rr

Reverse recovery time

I

F = 50 A; -dIF/dt = 100 A/µs;

-

80

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 30 V

-

0.4

-

µC

AVALANCHE LIMITING VALUE

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 25 A ; VDD ≤ 25 V ;

-

150

mJ

unclamped inductive turn-off

V

GS = 5 V ; RGS = 50 Ω

energy

February 1996

2

Rev 1.000

Similar Part No. - BUK566-60A

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK566-60H	56Kb / 7P	PowerMOS transistor Logic level FET August 1995 Rev 1.000

More results

Similar Description - BUK566-60A

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK573-60A	57Kb / 8P	PowerMOS transistor Logic level FET February 1994 Rev 1.100
	BUK562-100A	75Kb / 7P	PowerMOS transistor Logic level FET February 1996 Rev 1.000
	PHP3055L	52Kb / 7P	PowerMOS transistor Logic level FET April 1998 1 Rev 1.000
	BUK565-60H	72Kb / 8P	PowerMOS transistor Logic level FET June 1995 Rev 1.000
	BUK581-100A	59Kb / 8P	PowerMOS transistor Logic level FET January 1998 Rev 1.000
	BUK583-60A	55Kb / 8P	PowerMOS transistor Logic level FET September 1995 Rev 1.200
	PHD3055L	55Kb / 7P	PowerMOS transistor Logic level FET September 1997 Rev 1.000
	BUK563-60A	53Kb / 8P	PowerMOS transistor Logic level FET July 1995 Rev 1.000
	BUK565-60A	58Kb / 7P	PowerMOS transistor Logic level FET February 1996 Rev 1.000
New Jersey Semi-Conduct...	BUK553	97Kb / 2P	PowerMOS transistor Logic level FET
NXP Semiconductors	BUK543-100A	58Kb / 8P	PowerMOS transistor Logic level FET April 1993 Rev 1.100

More results

BUK566-60A Datasheet(PDF) 2 Page - NXP Semiconductors

BUK566-60A Datasheet(HTML) 2 Page - NXP Semiconductors

Similar Part No. - BUK566-60A

Similar Description - BUK566-60A

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL