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BUK566-60A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK566-60A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK566-60A Logic level FET STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 60 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; ID = 25 A - 20 26 m Ω resistance DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 25 A 17 30 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2800 pF C oss Output capacitance - 700 1000 pF C rss Feedback capacitance - 280 400 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 40 50 ns t r Turn-on rise time V GS = 5 V; - 150 250 ns t d off Turn-off delay time R GS = 50 Ω; - 350 450 ns t f Turn-off fall time R gen = 50 Ω - 190 250 ns L d Internal drain inductance Measured from upper edge of drain - 2.5 - nH tab to centre of die L s Internal source inductance Measured from source lead - 7.5 - nH soldering point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 50 A current I DRM Pulsed reverse drain current - - - 200 A V SD Diode forward voltage I F = 50 A ; VGS = 0 V - 1.1 2.0 V t rr Reverse recovery time I F = 50 A; -dIF/dt = 100 A/µs; - 80 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.4 - µC AVALANCHE LIMITING VALUE T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 25 A ; VDD ≤ 25 V ; - - 150 mJ unclamped inductive turn-off V GS = 5 V ; RGS = 50 Ω energy February 1996 2 Rev 1.000 |
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Similar Description - BUK566-60A |
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