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5S0765C Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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5S0765C Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 16 page KA5S-SERIES 5 Electrical Characteristics (SFET Part) (Continued) (Ta = 25 °C unless otherwise specified) Note: 1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2% 2.MOSFET switching time is essentially independent of operating temperature 3. Parameter Symbol Conditions Min. Typ. Max. Unit KA5S12656 Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source On Resistance(1) RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω Forward Transconductance(1) gfs VDS=50V, ID=4.0A 5.7 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2700 - pF Output Capacitance Coss - 300 - Reverse Transfer Capacitance Crss - 61 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) -18 - nS Rise Time tr - 37 - Turn Off Delay Time td(off) - 88 - Fall Time tf - 36 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - - 140 nC Gate-Source Charge Qgs - 20 - Gate-Drain (Miller) Charge Qgd - 69 - KA5S1265 Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance(1) RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω Forward Transconductance(1) gfs VDS=50V, ID=4.0A 5.7 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2700 - pF Output Capacitance Coss - 300 - Reverse Transfer Capacitance Crss - 61 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) -18 - nS Rise Time tr - 37 - Turn Off Delay Time td(off) - 88 - Fall Time tf - 36 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - - 140 nC Gate-Source Charge Qgs - 20 - Gate-Drain (Miller) Charge Qgd - 69 - S 1 R ---- = |
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