HN1B01FDW1T1G datasheet(3/6 Pages) ONSEMI

Part #	HN1B01FDW1T1G

Description	Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

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Manufacturer	ONSEMI [ON Semiconductor]

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HN1B01FDW1T1

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Typical Electrical Characteristics: PNP Transistor

Figure 1. Collector Saturation Region

0−1

−2

−3

−4

−6

−5

−200

0

−40

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−80

−120

−160

Figure 2. DC Current Gain

−1

−10

−100

−1000

1000

10

IC, COLLECTOR CURRENT (mA)

100

TA = 25°C

−2.0 mA

−1.5 mA

−1.0 mA

−0.5 mA

IB = −0.2 mA

VCE = −1.0 V

TA = 100°C

−25

°C

25

°C

Figure 3. DC Current Gain

−1

−10

−1000

−100

1000

10

IC, COLLECTOR CURRENT (mA)

100

Figure 4. VCE(sat) versus IC

−1

−10

−100

−1000

−1

−0.01

IC, COLLECTOR CURRENT (mA)

−0.1

IC/IB = 10

TA = 100°C

−25

°C

25

°C

TA = 100°C

−25

°C

25

°C

Figure 5. VBE(sat) versus IC

−1

−10

−1000

−100

−10

−0.1

IC, COLLECTOR CURRENT (mA)

−1

Figure 6. Base−Emitter Voltage

0

−0.1

−10,000

VBE, BASE−EMITTER VOLTAGE (V)

−0.1

COMMON EMITTER

VCE = 6 V

TA = 100°C

−25

°C

25

°C

TA = 25°C

IC/IB = 10

−1

−10

−100

−1000

−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9

−1

VCE = −6.0 V

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